Abstract Graphene is widely used for nano-devices due to its distinctive band structure and fascinating properties. The substrates could significantly affect the properties of graphene and related devices. In this work, we investigate the effect of surface morphology and roughness of patterned silicon nitride substrates on Raman scattering and stress of graphene. We find that the Raman scattering of graphene depend strongly on surface morphology and roughness of patterned substrates. It is concluded that the peak red-shifts in 2D and G bands was due to the strain induced by patterns with different surface morphology (holes and trenches) and roughness. Furthermore, the effects of morphology of patterned area are much greater than the role of surface roughness in the induced strain of graphene. Due to the larger surface area (about 1.65 times), the strain in the grooves is greater than in holes, in spite of greater surface roughness in holes. Our results also reveal that the effect of pattern depth should be taken into account to understand the Raman peak shift and the strain change of graphene. Our work is fundamentally important for understanding the graphene properties on dependence of surface morphology of substrates and enhancing the interfacial strength of graphene-based devices.

中文翻译：

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图案化氮化硅衬底对石墨烯拉曼散射和应力的影响

摘要 石墨烯因其独特的能带结构和迷人的特性而被广泛用于纳米器件。基材会显着影响石墨烯和相关器件的性能。在这项工作中，我们研究了图案化氮化硅衬底的表面形貌和粗糙度对拉曼散射和石墨烯应力的影响。我们发现石墨烯的拉曼散射强烈依赖于图案化基板的表面形态和粗糙度。得出的结论是，2D 和 G 带中的峰值红移是由于具有不同表面形态（孔和沟槽）和粗糙度的图案引起的应变。此外，图案化区域形态的影响远大于表面粗糙度在石墨烯诱导应变中的作用。由于表面积较大（约1.65倍），尽管孔中的表面粗糙度更大，但凹槽中的应变大于孔中的应变。我们的结果还表明，为了理解石墨烯的拉曼峰位移和应变变化，应考虑图案深度的影响。我们的工作对于理解石墨烯特性对基板表面形态的依赖性和增强基于石墨烯的器件的界面强度至关重要。