In this work, a dynamic model was established for the dephosphorization of metallurgical grade silicon by levitation refining. Particular emphasis was placed on the transport behavior of phosphorus in the liquid boundary layer, then at the melt surface and finally within the gas phase surrounding the levitated droplet. Within the melt boundary layer, and at the droplet surface, temperature was the controlling factor affecting phosphorus behavior. Within the gas phase, the controlling factors were temperature and gas velocity with temperature showing a more pronounced effect on the phosphorus mass transfer coefficient than gas velocity. The dynamic model shows that the dephosphorization of MG-Si was controlled by phosphorus diffusion within the gas phase. The values calculated from the model for the mass transfer coefficient were in good agreement with dephosphorization data obtained from levitation experiments conducted with metallurgical grade silicon. This work can provide a good foundation for application of electromagnetic levitation technology to the refining of metallurgical grade silicon.

中文翻译：

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电磁悬浮法对冶金级硅进行脱磷

在这项工作中，建立了冶金级硅的悬浮精炼脱磷动力学模型。特别强调磷在液体边界层中的传输行为，然后在熔体表面，最后在悬浮液滴周围的气相中。在熔体边界层内和液滴表面，温度是影响磷行为的控制因素。在气相中，控制因素是温度和气体速度，温度对磷传质系数的影响比气体速度更显着。动力学模型表明，MG-Si 的脱磷是由气相中的磷扩散控制的。从传质系数模型计算的值与从用冶金级硅进行的悬浮实验获得的脱磷数据非常一致。该工作为电磁悬浮技术在冶金级硅的精炼中的应用提供了良好的基础。