V₂O₅ and Ge₂Sb₂Te₅ (GST) films have been prepared by magnetron sputtering, and their transformation from amorphous to crystalline state studied by in situ resistance temperature measurements. During the heating process, a two-step transition was observed for both films, revealing three resistances corresponding to amorphous, intermediate, and crystalline states. The two phase-transition temperatures were 371.1°C and 394.0°C for V₂O₅, much higher than the values of ∼ 172.4°C and 240.4°C for GST. Compared with GST, the resistance of V₂O₅ was two orders of magnitude higher. The changes in the resistance and bandgap of V₂O₅ and GST during phase transition were investigated in detail. A phase-change memory device based on V₂O₅ was fabricated. Compared with GST, V₂O₅ exhibited a lower operating power and shorter phase-transition time. The application potential of V₂O₅ and GST for multilevel storage was compared.

通过磁控溅射制备了V ₂ O ₅和Ge ₂ Sb ₂ Te ₅（GST）薄膜，并通过原位电阻温度测量研究了它们从非晶态到结晶态的转变。在加热过程中，两个膜均观察到两步过渡，显示出对应于非晶态，中间态和结晶态的三个电阻。V ₂ O ₅的两个相变温度分别为371.1°C和394.0°C ，远高于GST的〜172.4°C和240.4°C。与GST相比，V ₂ O ₅的电阻高出两个数量级。详细研究了相变过程中V ₂ O ₅和GST的电阻和带隙的变化。制造了基于V ₂ O _5的相变存储器件。与GST相比，V ₂ O ₅具有较低的工作功率和较短的相变时间。比较了V ₂ O ₅和GST在多层存储中的应用潜力。