In the present work, we report the ferromagnetic (Fe, Ni) co-doped Zn1-x-yNiyFexO (y = 0.01 and x = 0.01, 0.03, 0.05) thin films fabricated through the RF magnetron sputtering on Silicon (400) substrate. Structural studies of prepared thin films through X-ray Diffraction (XRD) reveal the formation of a single-phased hexagonal structure of films. Atomic Force Microscopy (AFM) confirms the decrease in surface roughness with the increase in Fe doping. The optical band gap of the thin films analyzed through the UV–Vis spectroscopy suggests the appropriateness of prepared thin films to be utilized in optoelectronic devices. The magnetic study of these thin films confirmed the room temperature ferromagnetic (RTFM) behavior for prepared thin films. The observed magnetic behavior has been described in view of polaron percolation theory.

中文翻译：

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过渡金属掺杂 ZnO 薄膜的室温铁磁性研究

在目前的工作中，我们报告了铁磁 (Fe, Ni) 共掺杂 Zn1-x-yNiyFexO (y = 0.01 和 x = 0.01, 0.03, 0.05) 薄膜，通过在硅 (400) 衬底上进行射频磁控溅射制造。通过 X 射线衍射 (XRD) 对制备的薄膜进行的结构研究揭示了薄膜的单相六边形结构的形成。原子力显微镜 (AFM) 证实表面粗糙度随着 Fe 掺杂的增加而降低。通过紫外-可见光谱分析的薄膜的光学带隙表明制备的薄膜适用于光电器件。这些薄膜的磁性研究证实了制备的薄膜的室温铁磁 (RTFM) 行为。已根据极化子渗流理论描述了观察到的磁行为。