Photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPSSCs) with molybdenum oxide (MoO ) as hole-selective layers (HSLs) were demonstrated. A H2/Ar plasma pretreatment (PPT) was incorporated into a MoO /p-Si(100) interface, which shows the expected quality in terms of passivation. Moreover, the charge trapping characteristics of the MoO /p-Si(100) interface were presented. The PPT parameters, including power, treated time, flow ratio of H2/Ar, and temperature, were investigated. The experimental results indicate that the Si-H bond with a relatively high intensity was demonstrated for the H2/Ar PPT. The achievement of a conversion efficiency (CE) improvement of more than 1.2% absolute from 18.3% to 19.5% for SPSSCs with H2/Ar PPT was explored. The promoted mechanism was attributed to the reduction of the interface trap density caused by the large number of Si-H bonds at the silicon substrate and MoO interface.

中文翻译：

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H2/Ar等离子体预处理以氧化钼为空穴选择层的丝网印刷单晶硅太阳能电池的光伏和电荷俘获特性

展示了以氧化钼 (MoO) 作为空穴选择层 (HSL) 的丝网印刷单晶硅太阳能电池 (SPSSC) 的光伏特性。将 H2/Ar 等离子体预处理 (PPT) 结合到 MoO/p-Si(100) 界面中，这显示了预期的钝化质量。此外，还介绍了 MoO /p-Si(100) 界面的电荷俘获特性。研究了 PPT 参数，包括功率、处理时间、H2/Ar 的流量比和温度。实验结果表明，对于 H2/Ar PPT，证明了具有相对高强度的 Si-H 键。探索了使用 H2/Ar PPT 的 SPSSC 实现超过 1.2% 的绝对转换效率 (CE) 改进，从 18.3% 到 19.5%。