HfO₂ films have been deposited on quartz and p‐type Si (100) substrates using DC reactive magnetron sputtering technique by sputtering of hafnium target at different oxygen partial pressures. Variation of cathode potential with oxygen partial pressure was systematically studied. The influence of oxygen partial pressure on chemical composition, crystallographic structure, and optical properties of HfO₂ films was systematically investigated. X‐ray photoelectron spectroscopy and energy dispersive X‐ray analysis were employed to determine the chemical composition. The films formed at oxygen partial pressure of 5 × 10⁻⁴ Torr were of stoichiometric HfO₂. X‐ray diffractometer studies revealed that the films formed at 5 × 10⁻⁴ Torr were weakly crystallized with monoclinic structure. Optical bandgap of the HfO₂ films increased with increasing oxygen partial pressure. Metal oxide semiconductor structures with configuration of Al/HfO₂/p‐Si were fabricated and studied its dielectric and electrical properties. From these studies, it is confirmed that HfO₂ film‐based metal oxide semiconductor devices formed at an optimum oxygen partial pressure of 5 × 10⁻⁵ Torr showed dielectric constant of 13 with leakage current density of 4.7 × 10⁻⁷ A/cm².

中文翻译：

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氧分压影响直流反应溅射氧化ha薄膜的化学计量，结构，电学和光学性质

通过直流反应磁控溅射技术，通过在不同的氧气分压下溅射target靶，将HfO ₂膜沉积在石英和p型Si（100）衬底上。系统研究了阴极电位随氧分压的变化。系统地研究了氧分压对HfO ₂薄膜化学组成，晶体结构和光学性质的影响。使用X射线光电子能谱和能量色散X射线分析来确定化学成分。在5×10 ^-4托的氧分压下形成的膜是化学计量的HfO ₂。X射线衍射仪研究表明，膜形成为5×10 ^-4r结晶为单斜晶结构。HfO ₂薄膜的光学带隙随着氧分压的增加而增加。制备了具有Al / HfO ₂ / p-Si构型的金属氧化物半导体结构，并研究了其介电和电性能。从这些研究中，可以确认在最佳氧分压为5×10 ^-5 Torr的条件下形成的HfO ₂膜基金属氧化物半导体器件的介电常数为13，泄漏电流密度为4.7×10 ^-7 A / cm ^2。。