It is shown that the spin–orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for bound states formation. The mechanism is realized in 2D materials with a sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.

中文翻译：

---

具有强自旋轨道相互作用的二维材料中的库仑杂质

结果表明，带电杂质的库仑场产生的自旋-轨道相互作用（SOI）为形成束缚态提供了一种有效的机制。只要杂质在垂直于该层的方向局部破坏结构反转对称性，该机制就可以在具有足够强度的Rashba SOI的2D材料中实现。