Conventional Si-based complementary metal–oxide–semiconductor (CMOS) techniques are suffering intrinsic limitations induced by the continuous downscaling of physical dimensions, notably below the sub-10 nm technology node. 2D layered materials (2DLMs) are emerging materials carrying an exceptionally wide range of attributes, from metals, to semiconductors, and to insulators. The ultimate vertical dimension brings natural immunity to short-channel effects and high flexibility. In addition, the dangling-bond-free character enables random stacking of 2DLMs to build delicate artificial heterostructures. It gives birth to an advanced research domain denoted as all-2D electronics and optoelectronics, where devices are built of 2DLMs. The intact, atomically sharp interfaces and synergies of various building blocks lead to intriguing functionalities and ameliorated device performances. It provides an access to shape the future of nano-electronics and nano-optoelectronics. In this review, we begin with an overview on the fundamentals and merits of all-2D architectures. Then, we summarize the development of all-2D electronic devices, including field-effect transistors, logic gates, gas/tactile sensors, and hot electron transistors. Subsequently, we survey the evolution of all-2D photodetectors of various structures. Finally, we identify the critical challenges standing in the way of further development and lay out associated strategies addressing them, which aim to provide guidelines toward advancing this fascinating landscape.

中文翻译：

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面向先进电子和光电器件的全二维架构

传统的硅基互补金属氧化物半导体 (CMOS) 技术因物理尺寸的不断缩小（特别是低于 10 nm 技术节点）而受到固有的限制。二维层状材料 (2DLM) 是一种新兴材料，具有从金属到半导体再到绝缘体的广泛属性。终极的垂直尺寸带来了对短沟道效应的天然免疫力和高灵活性。此外，无悬挂键的特性使得 2DLM 能够随机堆叠，以构建精致的人工异质结构。它催生了一个被称为全二维电子学和光电子学的先进研究领域，其中的设备是由 2DLM 构建的。完整、原子级清晰的界面和各种构建模块的协同作用带来了有趣的功能和改善的设备性能。它提供了塑造纳米电子学和纳米光电子学未来的途径。在这篇评论中，我们首先概述全二维架构的基本原理和优点。然后，我们总结了全二维电子器件的发展，包括场效应晶体管、逻辑门、气体/触觉传感器和热电子晶体管。随后，我们调查了各种结构的全二维光电探测器的演变。最后，我们确定了进一步发展面临的关键挑战，并制定了解决这些问题的相关策略，旨在为推进这一迷人景观提供指导。