The simple junction between the organic semiconductor and insulator possesses fascinating properties. The increase of the conductivity of conjugated material is one of the effects that is well documented in the literature. However, to-this-day there is no consistent explanation for this phenomenon. Herein, a lamellar system based on the regioregular poly(3-hexylthiophene) (R-P3HT), and the recently developed poly(4-vinylpyridine) (P4VP) cross-linked with d-block metal complexes is studied. Bilayer samples, mimicking organic Field Effect Transistors, are fabricated in a three-step procedure: (i) R-P3HT thin film casting, (ii) subsequent P4VP film casting on top of the R-P3HT, and (iii) cross-linking of the P4VP surface. The Cobalt and Zinc complexes exist only on the surface of the bilayer and do not penetrate the semiconductor. The conductivity of the system increases with each preparation step, to reach a value four orders higher as compared to the as-cast R-P3HT. Additional experiments show that the described effect is a consequence of the contact of R-P3HT and P4VP. Observed increase in the system's conductivity is attributed to the electric field induced in the semiconductor area by the pyridine dipole moments directed by surface-oriented metal complex. These findings open up new possibilities in tuning the performance of organic electronic devices.

有机半导体和绝缘体之间的简单连接具有令人着迷的特性。共轭材料电导率的增加是文献中充分记录的影响之一。但是，到目前为止，对于这种现象还没有一致的解释。在此，研究了基于区域规则的聚（3-己基噻吩）（R-P3HT）和最近开发的与d-嵌段金属配合物交联的聚（4-乙烯基吡啶）（P4VP）的层状体系。模仿有机场效应晶体管的双层样品是通过三步过程制造的：（i）R-P3HT薄膜浇铸，（ii）随后的P4VP薄膜浇铸在R-P3HT的顶部，以及（iii）交联P4VP表面。钴和锌的配合物仅存在于双层表面上，不会穿透半导体。该系统的电导率随每个制备步骤的增加而增加，与铸态R-P3HT相比，其电导率高出四个数量级。其他实验表明，所描述的效果是R-P3HT和P4VP接触的结果。观察到的系统电导率的增加归因于表面定向金属络合物定向的吡啶偶极矩在半导体区域感应的电场。这些发现为调节有机电子设备的性能开辟了新的可能性。s的电导率归因于表面取向金属络合物定向的吡啶偶极矩在半导体区域感应的电场。这些发现为调节有机电子设备的性能开辟了新的可能性。s的电导率归因于表面取向金属络合物定向的吡啶偶极矩在半导体区域感应的电场。这些发现为调节有机电子设备的性能开辟了新的可能性。