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Red Light-Emitting Diodes with All-Inorganic CsPbI 3 /TOPO Composite Nanowires Color Conversion Films
Nanoscale Research Letters ( IF 5.418 ) Pub Date : 2020-11-16 , DOI: 10.1186/s11671-020-03430-w
Lung-Chien Chen , Yi-Tsung Chang , Ching-Ho Tien , Yu-Chun Yeh , Zong-Liang Tseng , Kuan-Lin Lee , Hao-Chung Kuo

This work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35.



中文翻译:

全无机CsPbI 3 / TOPO复合纳米线彩色转换膜的红色发光二极管

这项工作提出了一种通过蓝色GaN发光二极管和钙钛矿CsPbI 3 / TOPO复合材料的红色荧光颜色转换膜的组合获得颜色转换的红色光源的方法。使用热注入方法制备了高质量的CsPbI 3量子点(QD)。将胶体QD溶液与不同比例的三辛基氧化膦(TOPO)混合以形成纳米线。将由混合的紫外线树脂和胶体溶液制备的颜色转换膜涂在蓝色LED上。在50 mA的注入电流下测量和分析了器件的光学和电气性能;观察到最强的红光强度为93.1 cd / m 2当CsPbI 3 / TOPO为1:0.35时,在约708 nm处的外部量子效率为5.7%。

更新日期:2020-11-16
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