The prospects for using multicomponent films produced by aerosol spray pyrolysis for doping bulk ZnSe crystals with optically and electrically active impurities are shown for the first time. Lasing was obtained on ZnSe:Cr active elements doped during hot isostatic pressing treatment from CrS and CdS:Cr films. The lasing efficiency with respect to the absorbed radiation energy at a wavelength of 1.94 μm was about 54% for ZnSe:Cr doped from CrS film and 50% for ZnSe:Cr doped from CdS:Cr film, respectively. The luminescence and lasing characteristics of ZnSe:Cr active elements co-doped with Al and Na impurities were investigated. A high diffusion rate of Cr²⁺ ions into polycrystalline ZnSe doping process from sulfide films was observed.

首次展示了使用通过气溶胶喷雾热解生产的多组分薄膜将光学和电活性杂质掺杂到大块ZnSe晶体中的前景。在热等静压处理过程中从CrS和CdS：Cr薄膜中掺杂的ZnSe：Cr活性元素获得了激光发射。在1.94的波长相对于所吸收的辐射能量的激光效率μ米为约为硒化锌54％：铬从化合物CrS膜和50％的掺杂的ZnSe为：分别Cr膜，：铬从硫化镉掺杂。研究了Al和Na杂质共掺杂的ZnSe：Cr活性元素的发光和激光发射特性。观察到Cr ²⁺离子从硫化物膜到多晶ZnSe掺杂过程中的高扩散速率。