The effects of rapid thermal annealing (RTA) on aluminum nitride (AlN) waveguides were investigated. For the AlN prepared by the sputtering, high temperature annealing for too long time may deteriorate the device performance, while a 6-7 times RTA with a 60 s annealing at a temperature of 800 °C would result in a lowest waveguide loss of about 0.76 dB/cm. After annealing, self-pumped four-wave mixing was performed on an 800-nm-wide, 5.8-mm-long waveguide. With a pump beam launched into the waveguide, signal and idler sidebands can be generated, which shows that RTA assisted sputtering grown AlN can have a potential to be applied for optical frequency comb generation.

中文翻译：

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快速热退火对氮化铝波导的影响

研究了快速热退火 (RTA) 对氮化铝 (AlN) 波导的影响。对于溅射制备的 AlN，高温退火时间过长可能会降低器件性能，而 6-7 倍的 RTA 在 800°C 的温度下退火 60 秒会导致最低的波导损耗约为 0.76分贝/厘米。退火后，在 800 nm 宽、5.8 mm 长的波导上进行自泵浦四波混频。将泵浦光束发射到波导中，可以产生信号和空闲边带，这表明 RTA 辅助溅射生长的 AlN 具有应用于光频梳生成的潜力。