Photogating-Induced Controlled Electrical Response in 2D Black Phosphorus,ACS Applied Electronic Materials

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Photogating-Induced Controlled Electrical Response in 2D Black Phosphorus
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-11-14 , DOI: 10.1021/acsaelm.0c00592
Anirban Kundu ₁ , Renu Rani ₁ , Mamta Raturi ₁ , Kiran Shankar Hazra ₁

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Photo-induced tunability in charge carriers can be proven as a promising alternative approach to traditional electrostatic gating because of its flexibility to operate in noncontact mode. We have established a reversibly tunable optical gating technique on a few-layer black phosphorus (BP) flake by shining a laser beam, with variation in incident power and energy. The laser power-dependent evolution of Raman spectra of the BP flake is compared with the effect of conventional electrostatic gating. The comparison shows identical linear redshift in characteristic vibrational modes; thereby, a correlation between the laser power and induced charge carrier density is established. The transfer characteristics of BP field effect transistor (FET) under varying laser power validate the optical tunability of the gating effect and demonstrate identical variation in charge carrier density, found in conventional back-gated BP FET.

中文翻译：

二维黑磷的光门致控电响应

电荷载流子中的光致可调性可以证明是传统静电门控的一种有前途的替代方法，因为它具有在非接触模式下运行的灵活性。我们通过照射激光束，改变了入射功率和能量，在几层黑磷（BP）薄片上建立了可逆可调的光学选通技术。将BP薄片拉曼光谱的激光功率依赖性演变与常规静电门控的效果进行了比较。比较表明，在特征振动模式下线性红移相同；因此，在激光功率和感应的电荷载流子密度之间建立了相关性。

更新日期：2020-11-25

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