The paper explores the electrical conductivity, thermoelectric coefficient and thermal conductivity of SnTe crystals with the hyperstoichiometric tin content up to 1.0 at.% in the 90–300 K temperature range. Identified are the electron and lattice components of thermal conductivity and thermal resistance created by the structural vacancies. It is shown that the temperature dependencies of the electrical conductivity and thermoelectric coefficient are explained well by the model of two valence bands, whereas that of thermal conductivity are determined by the phonon-phonon scattering. Extrinsic stacking faults in the amount of 0.05 at.% Sn, create donor centers in the SnTe crystal, thereby decreasing its electrical and thermal conductivities. When the concentration of the extrinsic stacking faults is higher than 0.05 at.% Sn, they occupy the vacancies and enhance these parameters.

中文翻译：

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锡亚晶格中不同空位浓度的SnTe单晶的电荷和传热

该论文探讨了在 90-300 K 温度范围内具有高达 1.0 at.% 的超化学计量锡含量的 SnTe 晶体的电导率、热电系数和热导率。识别出由结构空位产生的热导率和热阻的电子和晶格分量。结果表明，电导率和热电系数的温度依赖性可以通过两个价带的模型得到很好的解释，而热导率的温度依赖性则由声子-声子散射决定。0.05 at.% Sn 的外在堆垛层错在 SnTe 晶体中产生施主中心，从而降低其导电性和导热性。当外部堆垛层错的浓度高于 0.05 at.% Sn 时，