In this paper, two highly linear OTAs are presented using a combination of three linearization techniques: floating gate, bulk driven, and source degeneration. In the first OTA, bulk driven floating gate MOSFETs are used as input transistors. The input signal given at the bulk terminals of these input transistors are in the opposite phase of the input signal provided to one of the gates of the respective floating gate MOSFET. This cross-coupling method resulted in a highly linear voltage-to-current conversion at the cost of reduced transconductance. In the second proposed OTA, this reduction in transconductance is restored by using novel quasi-bulk floating gate MOSFETs as input transistors while maintaining the improved linearity. Both the OTAs are designed and simulated using 180 nm CMOS design library and powered with ±0.5V dual power supply. The process variation and mismatch effects on both the OTAs are examined using corner and Monte Carlo analysis. The layouts of the proposed OTAs are also presented and workability is confirmed using post-layout simulations.

中文翻译：

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使用跨块和准块技术的块驱动浮栅 OTA 的线性度改进

在本文中，使用三种线性化技术的组合介绍了两种高度线性的 OTA：浮动栅极、体驱动和源极退化。在第一个 OTA 中，体驱动的浮栅 MOSFET 用作输入晶体管。在这些输入晶体管的体端子处给出的输入信号与提供给相应浮栅MOSFET的栅极之一的输入信号处于相反相位。这种交叉耦合方法以降低跨导为代价实现了高度线性的电压到电流转换。在第二个提议的 OTA 中，通过使用新型准体块浮栅 MOSFET 作为输入晶体管，在保持改善的线性度的同时恢复了跨导的这种降低。两种 OTA 均使用 180 nm CMOS 设计库进行设计和仿真，并采用±0.5V 双电源。使用角点和蒙特卡罗分析检查了两个 OTA 的过程变化和失配效应。还介绍了提议的 OTA 的布局，并使用布局后模拟确认了可行性。