In this study, indium tin oxide (ITO) was deposited onto sapphire and low resistive p-Si substrates using pulsed laser deposition (PLD) technique. The optical energy gap of ITO deposited on the sapphire substrate was 3.7 eV at room temperature. Photoluminescence (PL) of ITO shows an emission of broad peak at 524 nm. Photovoltaic (PV) characteristics of the n-ITO/p-Si heterojunction are examined and showed conversion efficiency [Formula: see text] of 1.8%. The open circuit voltage [Formula: see text] for this cell was 0.49 V while the short circuit current density [Formula: see text] was 17.4 mA/cm2. The fill factor of this cell was 22%. The ideality factor of ITO/Si heterojunction is about 3.1. The barrier height [Formula: see text] of the heterojunction was determined from I–V characteristics and was 0.83 eV. The responsivity of the heterojunction was measured and the maximum value of responsivity was 0.5 A/W without bias voltage. The minority carrier lifetime of the solar was measured using open circuit voltage decay (OCVD) method and found to be 227 [Formula: see text]s.

中文翻译：

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脉冲激光沉积制备ITO/p-Si异质结的光伏特性

在这项研究中，使用脉冲激光沉积 (PLD) 技术将氧化铟锡 (ITO) 沉积在蓝宝石和低电阻 p-Si 基板上。沉积在蓝宝石衬底上的 ITO 在室温下的光学能隙为 3.7 eV。ITO 的光致发光 (PL) 在 524 nm 处显示出宽峰发射。对 n-ITO/p-Si 异质结的光伏 (PV) 特性进行了检查，结果显示转换效率 [公式：见正文] 为 1.8%。该电池的开路电压 [公式：见正文] 为 0.49 V，而短路电流密度 [公式：见正文] 为 17.4 mA/cm2. 该单元的填充因子为 22%。ITO/Si异质结的理想因子约为3.1。异质结的势垒高度[公式：见正文]由 I-V 特性确定，为 0.83 eV。测量了异质结的响应度，在没有偏置电压的情况下，响应度的最大值为 0.5 A/W。太阳能的少数载流子寿命是使用开路电压衰减 (OCVD) 方法测量的，结果为 227 [公式：见正文]。