We study material gain of a novel type of quantum heterostructures of mixed (0D/2D) dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a broad range of injection currents (30–1200 A cm⁻² per-layer) we studied edge-emitting lasers with various numbers of InGaAs/GaAs QWD layers in the active region and different waveguide designs. The dependence of the material gain on the current is well fitted by an empirical exponential equation similar to the one used for quantum dots (QDs) in the whole range of injection current densities. The estimated QWD transparency current-density-per-layer of 31 A cm⁻² ranks between the values reported for quantum wells and QDs. The maximal QWD material gain as high as 1.1⋅10⁴ cm⁻¹ has been measured. The results obtained confirm specific gain properties of InGaAs QWDs making them promising active media for lasers, superluminescence diodes and optical amplifiers.

我们研究了一种混合类型（0D / 2D）的新型量子异质结构的材料增益，这种结构称为量子阱点（QWD）。为了评估大范围注入电流（每层30–1200 A cm ^-2）中的材料增益，我们研究了在有源区中使用不同数量的InGaAs / GaAs QWD层和不同波导设计的边缘发射激光器。在整个注入电流密度范围内，类似于指数量子点（QD）所使用的经验指数方程，可以很好地拟合材料增益对电流的依赖性。估计的每层QWD透明电流密度为31 A cm ^-2介于报告的量子阱和QD值之间。最大QWD材料增益高达1.1⋅10 ⁴厘米^-1已被测量。获得的结果证实了InGaAs QWD的特定增益特性，使其成为激光器，超发光二极管和光放大器的有希望的有源介质。