In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high- $\kappa $ HfO₂ gate insulator (GI) have been successfully fabricated and demonstrated for the first time. The amounts of Ni diffused into the poly-Si film can be effectively reduced by Ni removal processes prior to NILC. The asymmetric LC-NILC poly-Si TFTs exhibit higher field-effect mobility ( $\mu _{\mathrm{ FE}}$ ), steeper ideal subthreshold swing (S.S.), larger ON/OFF currents ratio ( $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ ), better uniformity, and improved C-V curves compared to traditional NILC (T-NILC) poly-Si TFTs owing to better crystallization quality and less low metal contamination. These remarkable device characteristics and the matched complementary TFTs (C-TFTs) electrical characteristics with low $\text{I}_{\mathrm{ OFF}}$ and low operation voltages make the asymmetric LC-NILC poly-Si TFTs promising for the future back-end of line (BEOL) compatible devices applications in monolithic three-dimension integrated circuits (3D-ICs).

中文翻译：

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具有低断态电流的非对称低金属污染镍诱导横向结晶多晶硅薄膜晶体管，用于后端 (BEOL) 兼容设备应用

在这项工作中，多晶硅薄膜晶体管 (poly-Si TFT) 具有不对称的低金属污染镍诱导横向结晶 (LC-NILC) 多晶硅通道和高 $\kappa $ HfO ₂栅极绝缘体（GI）已被成功制造和首次展示。在 NILC 之前通过 Ni 去除工艺可以有效地减少扩散到多晶硅膜中的 Ni 量。非对称 LC-NILC 多晶硅 TFT 表现出更高的场效应迁移率（ $\mu _{\mathrm{ FE}}$ )，更陡峭的理想亚阈值摆幅 (SS)，更大的 ON/OFF 电流比 ( $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ )、更好的均匀性和改进的 CV 曲线，与传统的 NILC (T-NILC) 多晶硅 TFT 相比，由于更好的结晶质量和更低的金属污染。这些显着的器件特性和匹配的互补 TFT (C-TFT) 电特性与低 $\text{I}_{\mathrm{ OFF}}$ 低工作电压使非对称 LC-NILC 多晶硅 TFT 有望用于未来单片三维集成电路 (3D-IC) 中的后端 (BEOL) 兼容设备应用。