Process integration feasibility of UV nanosecond melt laser annealing (MLA) in 14 nm node generation FinFET’s contact for dopant surface segregation and activation is assessed by using a 3D TCAD simulation tool. In a n-type source/drain (S/D) in-situ phosphorous doped epilayer, Sb ion implantation is performed, considering the advantage of its surface segregation in lowering of the contact resistivity. The simulation results show that the heat sources created by the laser irradiation are confined mainly in the replacement metal gate (RMG) part, suggesting a potential interest of controlling the polarization of laser light to enlarge the process window by reducing the laser absorption in the RMG part. Also, the estimated solidification front velocity ( ${V}$ ) in the MLA-induced epilayer regrowth (~4 m/s) satisfies the requirements (~1 m/s $< {V} < \,\,\sim 15$ m/s) to enable the surface segregation and metastable activation of the dopants. The surface segregation is also experimentally confirmed in the FinFET contact module.

中文翻译：

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FinFET 触点中熔体激光退火集成的 3D 模拟

紫外纳秒熔融激光退火 (MLA) 在 14 nm 节点生成 FinFET 接触中用于掺杂剂表面分离和激活的工艺集成可行性通过使用 3D TCAD 模拟工具进行评估。在n型源/漏(S/D)原位掺磷外延层中，考虑到Sb的表面隔离在降低接触电阻方面的优势，进行了Sb离子注入。仿真结果表明，激光照射产生的热源主要被限制在替代金属栅极 (RMG) 部分，这表明通过减少 RMG 中的激光吸收来控制激光偏振以扩大工艺窗口的潜在兴趣部分。此外，估计的凝固前沿速度（ ${V}$ ) 在 MLA 诱导的外延层再生 (~4 m/s) 中满足要求 (~1 m/s $< {V} < \,\,\sim 15$ m/s) 以实现掺杂剂的表面分离和亚稳态激活。在 FinFET 接触模块中也通过实验证实了表面偏析。