How a Mott insulator develops into a weakly coupled metal upon doping is a central question to understanding various emergent correlated phenomena. To analyze this evolution and its connection to the high-T_c cuprates, we study the single-particle spectrum for the doped Hubbard model using cluster perturbation theory on superclusters. Starting from extremely low doping, we identify a heavily renormalized quasiparticle dispersion that immediately develops across the Fermi level, and a weakening polaronic side band at higher binding energy. The quasiparticle spectral weight roughly grows at twice the rate of doping in the low doping regime, but this rate is halved at optimal doping. In the heavily doped regime, we find both strong electron-hole asymmetry and a persistent presence of Mott spectral features. Finally, we discuss the applicability of the single-band Hubbard model to describe the evolution of nodal spectra measured by angle-resolved photoemission spectroscopy (ARPES) on the single-layer cuprate La_2−xSr_xCuO₄ (0 ≤ x ≤ 0.15). This work benchmarks the predictive power of the Hubbard model for electronic properties of high-T_c cuprates.

莫特绝缘子在掺杂后如何发展成弱耦合金属是理解各种新兴相关现象的中心问题。分析这种演变及其与高T _c的联系率，我们使用超团簇的扰动理论研究了掺杂的Hubbard模型的单粒子光谱。从极低的掺杂开始，我们确定了一个高度重归一化的准粒子分散体，该分散体立即在费米能级上发展，并且在较高的结合能下极化极化带变弱。在低掺杂方案中，准粒子光谱权重大致以掺杂速率的两倍增长，但在最佳掺杂时，该速率减半。在重掺杂体系中，我们发现强电子空穴不对称性和莫特光谱特征的持续存在。最后，我们讨论了单频带Hubbard模型的适用性，以描述通过角分辨光发射光谱法（ARPES）在单层铜酸盐La ₂ - _x上测量的节点光谱的演化SR _X的CuO ₄（0≤ X ≤0.15）。这项工作基准了哈伯德模型对高T _c铜酸盐的电子性能的预测能力。