In this study, an improved RF CMOS transistor compact equivalent circuit model is presented. Due to the finite resistivity of the substrate, the magnetic coupling effect between the interconnection line and the substrate affects the signal propagation at mm‐wave frequency range. To characterize transistors in the terahertz band, a sophisticated network is introduced to represent the magnetic field of interconnection lines and substrate image current. In addition, the parameters of the proposed model are extracted by an analytical method. By comparison with the reported model, the proposed model can significantly improve the phase accuracy. The comparison of calculation results and experimental data shows that the proposed model can well characterize the transistor up to 220 GHz.

中文翻译：

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考虑磁耦合效应的改进的220 GHz RF CMOS紧凑等效电路模型

在这项研究中，提出了一种改进的RF CMOS晶体管紧凑等效电路模型。由于基板的有限电阻率，互连线和基板之间的磁耦合效应会影响毫米波频率范围内的信号传播。为了表征太赫兹带中的晶体管，引入了一个复杂的网络来表示互连线的磁场和基板镜像电流。另外，通过分析方法提取所提出模型的参数。通过与报道的模型进行比较，提出的模型可以显着提高相位精度。计算结果和实验数据的比较表明，所提出的模型可以很好地表征高达220 GHz的晶体管。