Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride,Advanced Optical Materials

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Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2020-11-13 , DOI: 10.1002/adom.202001271
Noah Mendelson ₁ , Luis Morales‐Inostroza ₂ , Chi Li ₁ , Ritika Ritika ₁ , Minh Anh Phan Nguyen ₁ , Jacqueline Loyola‐Echeverria ₁ , Sejeong Kim ₁ , Stephan Götzinger _{2,

3,

4} , Milos Toth _{1,

5} , Igor Aharonovich _{1,

5}

Affiliation

Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate is studied. Combining a range of characterization techniques, it is demonstrated that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. These emitters are further utilized and integrated with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ≈2.9 × 10⁶ cps and an average photon purity of g⁽²⁾(0) ≈ 0.1. The results advance the understanding of single photon emitter incorporation during chemical vapor deposition growth and demonstrate a key step towards compact devices for achieving maximum collection efficiency.

中文翻译：

六方氮化硼中明亮量子发射体的晶粒依赖性生长

六方氮化硼中的点缺陷由于其明亮而稳定的室温发射而已成为有前途的量子光源。在这项工作中，研究了在镍基板上化学气相沉积生长过程中引入的量子发射体。结合一系列表征技术，证明了量子发射器的结合仅限于（001）取向的镍晶粒。这样的发射器在亮度和稳定性方面显示出改善的发射特性。这些发射器被进一步利用并与紧凑的光学天线集成在一起，从而增强了从光源收集的光。混合设备产生的平均饱和计数率约为2.9×10 ⁶ cps，平均光子纯度为g ^（2）（0）≈0.1。结果提高了对在化学气相沉积过程中引入单光子发射器的理解，并证明了朝着实现最大收集效率的紧凑设备迈出的关键一步。

更新日期：2021-01-04

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