Alternating current poling (ACP) in air by changing poling temperature (70–130 °C) and voltages (2–6 kVrms/cm) on pseudo-ternary 0.24 Pb(In_1/2Nb_1/2)O₃-0.46 Pb(Mg_1/3Nb_2/3)O₃-0.30PbTiO₃ (PIMN-0.30PT) single crystals (SCs) manufactured by continuous-feeding Bridgman (CF BM) method was investigated. Free dielectric permittivity (ε^T₃₃/ε₀) and piezoelectric constant (d₃₃) were improved to be 7000 and 2340 pC/N, which were 29% higher than those of direct current poling (DCP) at 90 °C with 4 kV/cm (ε^T₃₃/ε₀ = 5440, d₃₃ = 1810 pC/N). However, phase change temperature (T_pc) decreased from 94 °C to 78 °C as opposite results reported by other groups. We demonstrated that the high temperature (HT) ACP improved piezoelectric performance of CF BM SCs, however, the T_pc were different from other crystal growth method. The well-designed ACP process was a promising method for mass production not only to enhance the electrical properties for the pseudo-ternary SCs but also reduce the risk of breakdown and realizes organic solvent-free poling process.

通过更改伪三元0.24 Pb（In _1/2 Nb _1/2）O ₃ -0.46 Pb上的极化温度（70–130°C）和电压（2–6 kVrms / cm）改变空气中的极化电流（ACP）研究了通过连续喂入布里奇曼法（CF BM）制备的（Mg _1/3 Nb _2/3）O ₃ -0.30PbTiO ₃（PIMN-0.30PT）单晶（SCs）。自由介电常数（ε ^Ť ₃₃ / ε ₀）和压电常数（d ₃₃）被提高到7000和2340 PC / N，均较直流极化（DCP）的高29％，在90℃下用4千伏/厘米（ε ^Ť₃₃ / ε ₀  = 5440，d ₃₃  = 1810 PC / N）。但是，相变温度（T _pc）从94°C降低到78°C，这与其他小组报告的结果相反。我们证明了高温（HT）ACP可以改善CF BM SC的压电性能，但是T _pc与其他晶体生长方法不同。精心设计的ACP工艺是一种有前途的批量生产方法，不仅可以增强伪三元SC的电性能，而且还可以降低击穿风险并实现无有机溶剂的极化工艺。