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Enhancement of PbZrO3 polarization using a Ti seed layer for energy storage application
Thin Solid Films ( IF 2.0 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.tsf.2020.138432
Mamadou D. Coulibaly , Caroline Borderon , Raphaël Renoud , Hartmut W. Gundel

Abstract Enhancement of lead zirconate (PbZrO3) polarization is achieved by using a titanium seed layer on alumina polycrystalline substrate. Thanks to the reduction of the lattice mismatch between the platinum electrode (3.92 A) and the PbZrO3 films (4.14 A), lead zirconate thin films oriented along the (111) direction with an orientation factor of around 65 % has been obtained. The (111) PbZrO3 presents an increase of 56 % of the polarization compared to the (100) PbZrO3. This enhancement is responsible of the higher recoverable energy storage density obtained in the (111) PbZrO3 thin films (8 J/cm3 at 600 kV/cm with an efficiency of 72 %). The (111) PbZrO3 also has a higher figure of merit, which indicates that the (111) crystallographic plane is the most favorable direction for energy storage.

中文翻译:

使用用于储能应用的 Ti 种子层增强 PbZrO3 极化

摘要 通过在氧化铝多晶衬底上使用钛籽晶层来增强锆酸铅 (PbZrO3) 极化。由于铂电极 (3.92 A) 和 PbZrO3 膜 (4.14 A) 之间晶格失配的减少,已经获得了沿 (111) 方向取向的锆酸铅薄膜,取向因子约为 65%。与 (100) PbZrO3 相比,(111) PbZrO3 的极化增加了 56%。这种增强是在 (111) PbZrO3 薄膜(600 kV/cm 时为 8 J/cm3,效率为 72%)中获得更高的可恢复能量存储密度的原因。(111) PbZrO3 也具有更高的品质因数,这表明 (111) 晶面是最有利的储能方向。
更新日期:2020-12-01
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