Abstract For the integration of the thermoelectric and magneto resistive active material (Ca2CoO3)0.62CoO2 (Ca3Co4O9) into silicon technology it is mandatory to provide, apart from diffusion barriers and epitaxial growth, electrical contacts with minimal electrical resistance between this oxide and the metal contact. Epitaxial Ca3Co4O9 thin films were grown by pulsed laser deposition on yttria stabilized zirconia (Y2O3)0.09(ZrO2)0.91 (YSZ) and Ir metallized YSZ buffered single crystalline (001)-Si substrates. X-ray diffraction pole figures of these multilayer systems reveal that the Ca3Co4O9 thin film exhibit a 12-fold in-plane rotational symmetry grown on a (001)-Ir and (001)-YSZ surface, but mutually rotated by 15 ∘ . Ir-Ca3Co4O9 thin film electrical contacts were fabricated by lateral structuring and overgrowth to allow 4-wire measurements for determining the pure Ir-Ca3Co4O9 contact current-voltage characteristic and the area specific contact resistance (ASR). We demonstrate, that the Ca3Co4O9/Ir/YSZ and Ca3Co4O9/YSZ layer system allows to realize low ASR, low in-plane electrical resistivity of the Ca3Co4O9 thin film while maintaining a high Seebeck coefficient.

中文翻译：

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外延生长的热电氧化物材料 (Ca2CoO3)0.62CoO2 和铱之间的低电阻电接触

摘要 为了将热电和磁阻活性材料 (Ca2CoO3)0.62CoO2 (Ca3Co4O9) 集成到硅技术中，除了扩散阻挡层和外延生长外，还必须提供在该氧化物和金属触点之间具有最小电阻的电触点. 通过脉冲激光沉积在氧化钇稳定的氧化锆 (Y2O3)0.09(ZrO2)0.91 (YSZ) 和 Ir 金属化 YSZ 缓冲单晶 (001)-Si 衬底上生长外延 Ca3Co4O9 薄膜。这些多层系统的 X 射线衍射极图显示 Ca3Co4O9 薄膜在 (001)-Ir 和 (001)-YSZ 表面上显示出 12 倍的面内旋转对称性，但相互旋转 15 ∘ 。Ir-Ca3Co4O9 薄膜电触点是通过横向结构化和过度生长制造的，以允许 4 线测量来确定纯 Ir-Ca3Co4O9 接触电流-电压特性和面积比接触电阻 (ASR)。我们证明，Ca3Co4O9/Ir/YSZ 和 Ca3Co4O9/YSZ 层系统允许实现 Ca3Co4O9 薄膜的低 ASR、低面内电阻率，同时保持高塞贝克系数。