Conventional Hall effect devices are designed to respond to a single magnetic field component in 3D space. However, if plastic encapsulated Hall effect devices in cubic crystals are exposed to poorly defined and unstable mechanical shear stress, small portions of unwanted, perpendicular magnetic field components will show up in the Hall output signals. Mathematically, any such crosstalk – may it originate from mechanical stress or not – can be expressed as a Taylor series in powers of the magnetic field. The even powers are the well known planar Hall effect at zero mechanical stress. In practice powers of even order are irrelevant, because they are eliminated by the widely used spinning current schemes. In this paper we address the odd powers of the magnetic crosstalk and their drift versus mechanical stress. The effect is small for Hall plates but large for Vertical Hall devices in (1 0 0)-silicon. It is fully described by piezo-resistance and piezo-Hall tensors. We present results of numerical simulations and measurements. Thin devices are less affected than thick devices. If magnetic angle sensors are made of Vertical Hall devices, in-plane shear stress leads to small orthogonality errors. This article lays the foundations for compensation circuits to eliminate such shear-stress induced orthogonality errors.

传统的霍尔效应设备设计用于响应3D空间中的单个磁场分量。但是，如果将塑料封装的立方晶体霍尔效应器件暴露于定义不明确且不稳定的机械剪切应力下，则霍尔输出信号中将出现一小部分不需要的垂直磁场分量。从数学上讲，任何此类串扰（无论是否源于机械应力）都可以表示为磁场强度的泰勒级数。偶数功率是在零机械应力下众所周知的平面霍尔效应。实际上，偶数次幂是无关紧要的，因为它们被广泛使用的自旋电流方案消除了。在本文中，我们解决了磁串扰的奇数功率及其漂移与机械应力的关系。对于霍尔板，效果很小，但对于（1 0 0）-硅中的垂直霍尔器件，效果很大。压阻和压电霍尔张量充分描述了这一点。我们提出数值模拟和测量的结果。薄型设备的影响小于厚型设备。如果磁角传感器由垂直霍尔器件制成，则平面内切应力会导致较小的正交误差。本文为消除此类切应力引起的正交误差奠定了补偿电路的基础。平面内切应力导致较小的正交误差。本文为消除此类切应力引起的正交误差奠定了补偿电路的基础。平面内切应力导致较小的正交误差。本文为消除此类切应力引起的正交误差奠定了补偿电路的基础。