On the application of hole‐selective MoOx as full‐area rear contact for industrial scale p‐type c‐Si solar cells,Progress in Photovoltaics

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On the application of hole‐selective MoOx as full‐area rear contact for industrial scale p‐type c‐Si solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-11-12 , DOI: 10.1002/pip.3363
Hisham Nasser ₁ , Fırat Es _{1,

2} , Mona Zolfaghari Borra _{1,

3} , Emel Semiz _{1,

4} , Gamze Kökbudak _{1,

3} , Efe Orhan ₁ , Raşit Turan _{1,

3}

Affiliation

We present the feasibility of integrating substoichiometric molybdenum oxide (MoO_x) as hole‐selective rear contact into the production sequence of industrial scale p‐type crystalline silicon (c‐Si) solar cells. Thin films of MoO_x are deposited directly on p‐type c‐Si by thermal evaporation at room temperature. It is found that Ag/MoO_x/p‐type c‐Si rear contact structure exhibits low contact resistivity and modest surface recombination current density. The attained peak efficiency (η) of the fabricated solar cells is 17.65% with V_oc of 626 mV, J_sc of 36.8 mA/cm², and fill factor (FF) of 76.63%. Next, a complete loss analysis of a MoO_x/p‐type Si heterojunction solar cell is carried out for the first time by using Quokka simulation software that employs characteristics of different layers which constitute the fabricated solar cell. Based on this loss analysis, the dominant loss mechanisms are defined and a roadmap to attain the desired highest possible efficiency from industrial scale p‐type c‐Si solar cells with full‐area MoO_x hole‐collecting rear contact is explored.

中文翻译：

关于将空穴选择性MoOx用作工业规模p型c-Si太阳能电池的全区域后触点的应用

我们提出了将亚化学计量的氧化钼（MoO _x）作为空穴选择性后触点集成到工业规模p型晶体硅（c-Si）太阳能电池生产序列中的可行性。MoO _x薄膜在室温下通过热蒸发直接沉积在p型c-Si上。发现Ag / MoO _x / p型c-Si后接触结构具有较低的接触电阻率和适度的表面复合电流密度。制备的太阳能电池的峰值效率（η）为17.65％，V _oc为626 mV，J _sc为36.8 mA / cm ²，填充系数（FF）的76.63％。接下来，首次使用Quokka模拟软件对MoO _x / p型Si异质结太阳能电池进行了完整的损耗分析，该软件利用了构成太阳能电池的不同层的特性。在此损耗分析的基础上，定义了主要的损耗机制，并探索了一条路线图，以期从具有全面积MoO _x空穴收集后触点的工业规模p型c-Si太阳能电池获得所需的最高效率。

更新日期：2020-11-12

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