Abstract In this study, NiSi/SiC core-shell nanowires grown on crystal silicon and Ni foil substrates by hot-wire chemical vapour deposition were extensively investigated. These nanowires were grown by varying the CH4 flow-rate from 0.5 to 3.5 sccm. The nanowires were found to grow at CH4 flow-rates above 0.5 sccm. The structure of the nanowires consisted of a single crystalline NiSi as the core and polycrystalline SiC nanocolumn as the shell. The growth of the NiSi nanowires solely follows a limited nucleation silicide reaction, which is strongly dependent on the growth precursor vapour pressures of SiH4 and CH4 molecules. Increasing the CH4 flow-rate up to 2.0 sccm enhances the growth of high-density vertically aligned nanowires. The electrochemical properties of the NiSi/SiC core-shell nanowire electrodes were also investigated. The NiSi/SiC core-shell nanowire electrode prepared at 2.0 sccm demonstrated the highest electrochemical performance compared with other nanowire electrodes. This nanowire electrode had the highest specific capacitance (234.13 mF/cm2) at the highest scan rate and demonstrated good electrochemical stability (capacity retention of 80 %) at the highest applied current density after 2500 cycles.

中文翻译：

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通过热线化学气相沉积生长的 NiSi/SiC 核壳纳米线的壳厚度优化，用于超级电容器应用

摘要 在这项研究中，广泛研究了通过热线化学气相沉积在晶体硅和镍箔衬底上生长的 NiSi/SiC 核壳纳米线。这些纳米线是通过改变 CH4 流速从 0.5 到 3.5 sccm 来生长的。发现纳米线以高于 0.5 sccm 的 CH4 流速生长。纳米线的结构由单晶NiSi作为核和多晶SiC纳米柱作为壳组成。NiSi 纳米线的生长仅遵循有限的成核硅化物反应，该反应强烈依赖于 SiH4 和 CH4 分子的生长前体蒸气压。将 CH4 流速增加至 2.0 sccm 可促进高密度垂直排列的纳米线的生长。还研究了 NiSi/SiC 核壳纳米线电极的电化学性能。与其他纳米线电极相比，以 2.0 sccm 制备的 NiSi/SiC 核壳纳米线电极表现出最高的电化学性能。该纳米线电极在最高扫描速率下具有最高的比电容 (234.13 mF/cm2)，并在 2500 次循环后的最高施加电流密度下表现出良好的电化学稳定性（容量保持率为 80%）。