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Characterization of the boron profile and coordination in altered glass layers by EEL spectroscopy
Micron ( IF 2.5 ) Pub Date : 2020-11-12 , DOI: 10.1016/j.micron.2020.102983
H Aréna 1 , R Podor 2 , H-P Brau 2 , J Nelayah 3 , N Godon 1 , M Cabié 4 , E Garcès 1 , C Mansas 1 , D Rébiscoul 2
Affiliation  

Electron energy-loss spectroscopy was used to characterize the boron profile and its coordination (BIII and BIV), along the complex alteration layer of glass samples altered for 511 days at 50 °C in solution containing FeCl2, MgCl2 and/or CaCl2. To reach this goal, the impact of both TEM operating conditions and sample preparation on the determination of the boron coordination was first studied using mineralogical and pristine glasses reference samples. Then, the boron concentration profiles were characterized in the glass alteration layer. These profiles were found to be S-shaped with a thickness around forty nanometers. The proportion of BIII was found to decrease with the boron total concentration (from the pristine glass to the gel layer), which suggests a higher bonding strength for BIV bonds than that of BIII bonds under the alteration conditions. These findings are of tremendous interest to advance further in the understanding of glass alteration mechanisms.



中文翻译:

通过 EEL 光谱表征改变的玻璃层中的硼分布和配位

电子能量损失光谱用于表征硼分布及其配位(B III和 B IV),沿着玻璃样品的复杂蚀变层在 50 °C 下在含有 FeCl 2、MgCl 2和/或氯化钙2。为了实现这一目标,首先使用矿物和原始玻璃参考样品研究了 TEM 操作条件和样品制备对硼配位测定的影响。然后,在玻璃蚀变层中表征硼浓度分布。发现这些轮廓呈 S 形,厚度约为 40 纳米。B的比例III发现随着硼总浓度(从原始玻璃到凝胶层)而降低,这表明在改变条件下B IV键的键合强度高于 B III键的键合强度。这些发现对于进一步理解玻璃改变机制具有极大的兴趣。

更新日期:2020-12-01
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