The present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

中文翻译：

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使用电流-电压 (I-V) 测量的具有和不具有 (PVP: Sn-TeO2) 中间层的 Al/p-Si 二极管的电气特性

本研究旨在研究 (PVP: Sn-TeO2) 界面层对 Al/p-Si 二极管电参数的影响。为此，通过超声辅助方法开发了 (Sn-TeO2) 纳米结构，并通过 XRD、SEM、EDS 和 UV-Vis 方法研究了它们的电学和光学特性。从 (αhυ)2 对 (hυ) 图中发现 Sn-TeO2 的带隙为 4.65 eV。计算有/无（PVP：Sn-TeO2）中间层的Al/p-Si二极管的主要电气参数，如理想因子（n）、零偏置势垒高度（Φ0）和串联电阻（Rs）通过应用和比较热电子发射理论和张氏函数的两种方法。这些结果表明 (PVP: Sn-TeO2 中间层的存在, 随着 Φ0 的增加, n 和 Rs 的减少, 与 MS 二极管相比，这导致 MPS 的整流显着增加。通过正向 LnIF − LnVF 和反向 LnIR − VR0.5 偏置电流检查它们的电流传输机制 (CTM)，然后计算 Poole-Frenkel 和肖特基场降低系数 (β) 并获得其值从理论和实验方法来看，MS和MPS二极管的反向电流机制分别受肖特基发射和Pool-Frenkel机制支配。