An analytical model incorporating the density of trap states for a bendable organic field effect transistor (OFET) is presented in this paper. The aim of this work is to propose a novel modeling framework to quantitatively characterize the bending effects on the electrical properties of an OFET in the linear and saturation regimes. In this model, the exponentially distributed shallow trap states are introduced into the Poisson equation to describe the carrier transports in the channel. The carrier mobility takes into account the low field mobility enhancement under gradual channel approximation and high field degradation. As a result, the generalized current-voltage transistor equations are derived for the first time to reflect the transconductance relationships of the OFET with trap states. In addition, an electro-mechanical coupling relationship is established per the metaphorical analogy between inorganic and organic semiconductor energy band models to quantify the stress-induced variations of the carrier mobility, and the threshold voltage. It is revealed that the before- and after-bending transconductances, predicted from the derived analytical model, are in good agreement with the experimental data measured from DNTT-based OFET bending tests.

本文提出了一种包含可弯曲有机场效应晶体管（OFET）陷阱能级密度的分析模型。这项工作的目的是提出一种新颖的建模框架，以定量表征在线性和饱和状态下对OFET的电性能的弯曲效应。在该模型中，指数分布的浅陷阱态被引入泊松方程中，以描述信道中的载流子传输。载波迁移率考虑了在逐步信道逼近和高场衰减下的低场迁移率增强。结果，首次导出了通用的电流-电压晶体管方程，以反映具有陷阱态的OFET的跨导关系。此外，根据无机和有机半导体能带模型之间的隐喻类比，建立了机电耦合关系，以量化应力引起的载流子迁移率和阈值电压的变化。结果表明，根据导出的分析模型预测的弯曲前和弯曲后的跨导与基于DNTT的OFET弯曲测试测得的实验数据非常吻合。