Thermal desorption spectroscopy (TDS) measurement of tungsten (W) exposed to tritium (T₂) under a series of conditions was conducted, and the peak of T₂ desorption reached as high as 895 K at the heating rate of 20 K/min. The detrapping energy of T in W was then determined experimentally to be 2.18 ± 0.22 eV, suggesting that T was mainly trapped by vacancy clusters which may be formed during manufacturing and enhanced by charged T atoms.

中文翻译：

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钨中tri的解吸能的测定

在一系列条件下进行了钨（W）暴露于tri（T ₂）的热解吸光谱（TDS）测量，在20 K / min的加热速率下，T _2的解吸峰达到了895K。然后通过实验确定T在W中的去陷阱能为2.18±0.22 eV，这表明T主要被空位簇捕获，该空位簇可能在制造过程中形成并由带电的T原子增强。