Bismuth (Bi) doped ZnO (BZO) thin films were successfully synthesized by sol-gel spin-coating technique. The effects of the concentration and photoelectric properties of the films were characterized using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), selected area electron diffraction (SAED) techniques, photoluminescence (PL) studies. The results showed that the successful doping of Bi³⁺ into ZnO lattice could produce more photo-generated carriers. The grain size of the film was decreased with the increasing of doping ratio. The photocurrent of 1% Bi³⁺ doped BZO thin film is 25% higher than that of pure ZnO thin film.

通过溶胶-凝胶旋涂技术成功地合成了铋（Bi）掺杂的ZnO（BZO）薄膜。使用扫描电子显微镜（SEM），能量色散光谱（EDS），透射电子显微镜（TEM），选择区域电子衍射（SAED）技术，光致发光（PL）研究来表征膜的浓度和光电性能的影响。结果表明，将Bi ³⁺成功掺杂到ZnO晶格中可以产生更多的光生载流子。随着掺杂比例的增加，薄膜的晶粒尺寸减小。1％Bi ³⁺掺杂的BZO薄膜的光电流比纯ZnO薄膜的光电流高25％。