Mg-doped p-type semiconducting aluminium-gallium-nitride hole-source-layer (p-AlGaN HSL) materials are quite promising as a source of hole "p" carriers for the ultraviolet-B (UVB) light-emitting-diode (LEDs) and laser-diodes (LDs). However, p-AlGaN hole source layer (HSL) has a central issue of low hole injection due to poor activation of Mg-atoms, and presence of unwanted impurity contaminations and existence of localized coherent state. Therefore, first the impact of Mg-level on the crystallinity, Al-composition and relaxation conditions in the p-AlGaN HSL were studied. An increasing trend in the lattice-relaxation ratios with increasing of Mg-concentrations in the p-AlGaN HSL were observed. Ultimately a 40-60% relaxed and 1.4μm-thick p-AlGaN HSL structure with total threading dislocation densities (total-TDDs) of approximately ~ 8-9×108 cm-2 was achieved, which can nearly match with our previously design of 4µm-thick and 50% relaxed n-AlGaN electron source layer (ESL) with total-TDDs of approximately ~ 7-8×108 cm-2. Subsequently, structurally a symmetric p-n junction for UVB emitters was accomplished. Finally, the influence of excimer laser annealing (ELA) on the activation of Mg-concentration and on suppression of unwanted impurities as well as on the annihilation of localized energy state in the p-AlGaN HSL were deeply investigated. ELA treatment suggesting reduced Ga-N bonding ratio and increased Ga-O as well as Ga-Ga bonding ratios in the p-AlGaN HSL. After ELA treatment the localized coherent state were suppressed and ultimately the PL emission efficiency as well as conductivity was drastically improved in p-AlGaN HSL. By using lightly polarized p-AlGaN HSL assisted by ELA treatment, quite low-resistivity in p-type AlGaN HSL at room temperature (hole concentration is ~2.6×1016 cm-3, the hole mobility is ~ 9.6 cm2/V-s and the resistivity ~ 24.39 Ω-cm were reported). ELA treatment has a great potential for localized activation of both p-AlGaN HSL as well as n- and p-electrode on n-AlGaN and p-AlGaN contact layer.

中文翻译：

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Mg 水平对 p-AlGaN 空穴源层 (HSL) 中晶格弛豫的影响以及对 UVB 发射器的 p-AlGaN HSL 进行准分子激光退火的尝试

Mg掺杂的p型半导体铝-镓-氮化物空穴源层（p-AlGaN HSL）材料作为紫外-B（UVB）发光二极管的空穴“p”载流子源非常有前景。 LED）和激光二极管（LD）。然而，p-AlGaN 空穴源层 (HSL) 的核心问题是由于 Mg 原子的活化差、存在不希望的杂质污染和存在局部共格态而导致空穴注入低。因此，首先研究了 Mg 水平对 p-AlGaN HSL 中结晶度、Al 组成和弛豫条件的影响。观察到随着 p-AlGaN HSL 中 Mg 浓度的增加，晶格弛豫比呈增加趋势。最终放松了 40-60% 和 1。实现了 4μm 厚的 p-AlGaN HSL 结构，总螺纹位错密度 (total-TDDs) 约为 ~ 8-9×108 cm-2，这几乎可以与我们之前设计的 4μm 厚和 50% 弛豫 n- 相匹配AlGaN 电子源层 (ESL)，总 TDD 约为 7-8×108 cm-2。随后，在结构上实现了用于 UVB 发射器的对称 pn 结。最后，深入研究了准分子激光退火 (ELA) 对 p-AlGaN HSL 中 Mg 浓度的活化和不需要的杂质的抑制以及对局域能态湮灭的影响。ELA 处理表明 p-AlGaN HSL 中的 Ga-N 键合率降低，Ga-O 和 Ga-Ga 键合率增加。在 ELA 处理后，局部相干态被抑制，最终 p-AlGaN HSL 中的 PL 发射效率和电导率显着提高。通过使用 ELA 处理辅助的轻偏振 p-AlGaN HSL，p 型 AlGaN HSL 在室温下具有相当低的电阻率（空穴浓度约为 2.6×1016 cm-3，空穴迁移率约为 9.6 cm2/Vs，电阻率报告了~ 24.39 Ω-cm）。ELA 处理对于 p-AlGaN HSL 以及 n-AlGaN 和 p-AlGaN 接触层上的 n 和 p 电极的局部激活具有很大的潜力。报告了 39 Ω-cm)。ELA 处理对于 p-AlGaN HSL 以及 n-AlGaN 和 p-AlGaN 接触层上的 n 和 p 电极的局部激活具有很大的潜力。报告了 39 Ω-cm)。ELA 处理对于 p-AlGaN HSL 以及 n-AlGaN 和 p-AlGaN 接触层上的 n 和 p 电极的局部激活具有很大的潜力。