A poly(methyl methacrylate) (PMMA) substrate is easily soluble in acetone and cannot withstand high temperatures, thereby restricting the application of graphene or boron nitride (BN) on it. Furthermore, the assembly mechanism of a BN/graphene/BN heterostructure directly determines the performance of a device. In this paper, we report the single-spin photoresist stacking transfer assembly (SPSTA) of a BN/graphene/BN heterostructure on a PMMA substrate using a photoresist as a support layer. The photoresist served as a protective layer for the retained BN/graphene/BN heterostructure. The excess BN/graphene/BN heterostructure was etched away by oxygen plasma, following which a metal was evaporated on the photoresist surface. As metal is impervious to light, the excellent light transmittance of the PMMA substrate could be utilized. After the photoresist was denatured by ultraviolet light exposure on the back of the substrate, it was dissolved by a sodium hydroxide (NaOH) solution, and a one-dimensional contact of the BN/graphene/BN heterostructure and metal was achieved. Finally, through different testing methods, we found that the SPSTA of the BN/graphene/BN heterostructure yields a smooth morphology and high electrical conductivity with a uniform sheet resistance. We examined the air failure of the BN/graphene/BN heterostructure and found that its SPSTA was stable.Our study realized the transfer of two-dimensional (2D) materials on PMMA substrates for the first time, overcame the membrane surface pollution caused by the traditional BN/graphene/BN heterostructure assembly process, realized the fabrication of BN/graphene/BN heterostructure devices on PMMA substrates for the first time, and offers important insights for the application of graphene and BN or other 2D materials on PMMA substrates.

聚（甲基丙烯酸甲酯）（PMMA）基材易溶于丙酮，不能承受高温，从而限制了石墨烯或氮化硼（BN）的应用。此外，BN /石墨烯/ BN异质结构的组装机制直接决定了器件的性能。在本文中，我们报告了使用光致抗蚀剂作为支撑层的PMMA基板上BN /石墨烯/ BN异质结构的单旋光致抗蚀剂堆叠转移组件（SPSTA）。光刻胶用作保留的BN /石墨烯/ BN异质结构的保护层。多余的BN /石墨烯/ BN异质结构被氧等离子体蚀刻掉，然后在光致抗蚀剂表面上蒸发了金属。由于金属是不透光的，因此可以利用PMMA基板的优异透光率。通过在基板背面通过紫外线曝光使光致抗蚀剂变性后，用氢氧化钠（NaOH）溶液将其溶解，并实现BN /石墨烯/ BN异质结构与金属的一维接触。最后，通过不同的测试方法，我们发现BN /石墨烯/ BN异质结构的SPSTA产生了平滑的形态和高电导率，且具有均匀的薄层电阻。我们检查了BN /石墨烯/ BN异质结构的空气失效，发现其SPSTA稳定。传统的BN /石墨烯/ BN异质结构组装工艺，