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The magnetic, optical and electronic properties of Mn–X(X=O, Se, Te, Po) co-doped MoS2 monolayers via first principle calculation
Materials Research Express ( IF 1.8 ) Pub Date : 2020-11-10 , DOI: 10.1088/2053-1591/abc5df
Qi-Zhi Lang 1, 2, 3 , Yan-Bin Huang 1, 2, 3 , Jie-Min Wei 1, 3, 4 , Yi Wang 1, 2, 3 , Xiang Guo 1, 2, 3 , Zi-Jiang Luo 1, 2, 5 , Zhao Ding 1, 2, 3
Affiliation  

The magnetic and optical properties studies in monolayer transition-metal dichalcogenides have attracted attention because of the manufacture spintronic, electronic and photonic devices. This paper reported the magnetism and optical properties of Mn–O, Mn–Se, Mn–Te, Mn–Po co-doped MoS2 monolayer systems via first principle calculation, results show Mn-X(X=O, Se, Te and Po) co-doped MoS2 monolayer systems appear half-metal (HM) ferromagnet, their corresponding magnetic moments are 1.06 μ B, 1.04 μ B, 1.04 μ B, 1.03 μ B, respectively. Co-doped systems have smaller band gaps due to effective charge compensation among Mn–O, Mn–Se, Mn–Te and Mn–Po atoms. According to calculation, we find Mn–O co-doped MoS2 monolayer has the lowest formation energy in four co-doping systems. Thus the Mn–O co-doped MoS2 monolayer has the best stability. The Mn–Se co-doped MoS2 monolayer has the highest static dielectric constants ${\varepsilon }_{1}\left(\omega \right)$ and ${\varepsilon }_{2}\left(\omega \right),$ refractive index $n\left(\omega \right)$ and $k\left(\omega \right).$ In energy range of 0 to 1.5 eV, the transmittance of intrinsic MoS2 system is higher than that of all co-doped MoS2 systems obtained by absorption coefficient $\alpha \left(\omega \right).$



中文翻译:

通过第一性原理计算Mn-X(X=O, Se, Te, Po)共掺杂MoS 2单层的磁、光和电子特性

由于制造自旋电子、电子和光子器件,单层过渡金属二硫属化物的磁性和光学性质研究引起了人们的关注。本文通过第一性原理计算报道了Mn-O、Mn-Se、Mn-Te、Mn-Po共掺杂MoS 2单层体系的磁性和光学性质,结果表明Mn-X(X=O, Se, Te和Po)共掺杂MoS 2单层体系出现半金属(HM)铁磁体,其对应的磁矩分别为1.06 μ B、1.04 μ B、1.04 μ B、1.03 μ B, 分别。由于 Mn-O、Mn-Se、Mn-Te 和 Mn-Po 原子之间的有效电荷补偿,共掺杂系统具有更小的带隙。根据计算,我们发现Mn-O共掺杂的MoS 2单层在四种共掺杂体系中具有最低的形成能。因此Mn-O共掺杂的MoS 2单层具有最好的稳定性。Mn-Se 共掺杂的 MoS 2单层具有最高的静态介电常数${\varepsilon }_{1}\left(\omega \right)$${\varepsilon }_{2}\left(\omega \right),$折射率,$n\left(\omega \right)$并且$k\left(\omega \right).$在 0 到 1.5 eV 的能量范围内,本征 MoS 2系统的透射率高于所有共掺杂 MoS 2系统的透射率。吸收系数$\alpha \left(\omega \right).$

更新日期:2020-11-10
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