Due to the unique nonlinear theory of memristors, it has been a research hotspot in the application of bionic synapses and neuromorphic computing for a long time. However, the currently designed memristors are difficult to be compatible with standard microelectronic processes to achieve large-scale integration. In this paper, a prototype structure of a silicon-controlled-rectifier-memristor (SCRM) will be proposed to solve the above problems. Technology computer aided design is utilized to simulate the memristive behavior of SCRM. The device is manufactured by the 0.18 μm bipolar complementary-metal-oxide-semiconductor double-diffused-metal-oxide-semiconductor process. The test platform was established to verify the memristive characteristics of SCRM. When a preset pulse is applied to both terminals of the device, the voltage and current of the SCRM are clamped to a lower level due to the negative-resistance effect, and hysteresis occurs. The I–V hysteresis loop fitted by extracting parameters verifies the consistency of theory, simulation and experiment. SCRM can change continuously between low-resistance state and high-resistance state. The design idea of SCRM compatible with silicon-based processes will promote further research on large-scale on-chip integrated neuromorphic computing.

由于忆阻器独特的非线性理论，长期以来一直是仿生突触的应用和神经形态计算的研究热点。然而，当前设计的忆阻器难以与标准微电子工艺兼容以实现大规模集成。为了解决上述问题，本文提出了一种硅控整流器忆阻器（SCRM）的原型结构。利用技术计算机辅助设计来模拟SCRM的忆阻行为。该器件由0.18μ双极互补金属氧化物半导体双扩散金属氧化物半导体工艺。建立测试平台以验证SCRM的忆阻特性。当将预设脉冲施加到设备的两个端子时，由于负电阻效应，SCRM的电压和电流会被钳位在较低的水平，并且会产生滞后现象。在我- V磁滞回线装配通过提取参数验证理论，模拟和实验的一致性。SCRM可以在低电阻状态和高电阻状态之间连续变化。与基于硅的工艺兼容的SCRM的设计思想将促进对大规模片上集成神经形态计算的进一步研究。