The stability issue of organometal halide perovskite optoelectronic devices, e.g. the current–voltage –hysteresis effect and the degradation of the device performance under external light/electric field, are closely related to the ionic movement inside perovskite materials. However, our understanding of ionic properties is still at a relatively preliminary stage, and the detailed dynamic process of ionic movement in perovskite materials is controversial. Photoluminescence (PL) imaging microscopy, as a versatile real-time observation and characterization method, has become a powerful tool to explore the ionic movement in different material systems. This review firstly summarizes the development of PL imaging microscopy for ion migration characterization in perovskite materials. Secondly, combined with the wide-field PL imaging microscope, the dynamic process of ion migration in halide perovskite materials is further discussed. Thirdly, the observations of the degradation process and the ion migration suppression in different perovskite optoelectronic devices characterized by PL imaging microscopy are also introduced. This methodology is of significance for the deep understanding of the interaction between carriers/defect ions in perovskite materials, and provides guidance to further improve the stability and efficiency of perovskite optoelectronic devices.

钙钛矿型有机金属卤化物光电器件的稳定性问题，例如电流-电压-磁滞效应以及外部光/电场下器件性能的下降，与钙钛矿材料内部的离子运动密切相关。但是，我们对离子性质的理解仍处于相对初级阶段，钙钛矿材料中离子运动的详细动态过程尚有争议。作为一种通用的实时观察和表征方法，光致发光（PL）成像显微镜已成为探索不同材料系统中离子运动的强大工具。本文首先概述了用于钙钛矿材料中离子迁移表征的PL成像显微镜的发展。其次，结合广角PL成像显微镜，进一步讨论了卤化物钙钛矿材料中离子迁移的动态过程。第三，还介绍了以PL成像显微镜为特征的不同钙钛矿光电器件降解过程和离子迁移抑制的观察结果。该方法对于深入了解钙钛矿材料中载流子/缺陷离子之间的相互作用具有重要意义，并为进一步提高钙钛矿光电器件的稳定性和效率提供了指导。