RT spin injection and optical polarization in nitride-based spin-LEDs are investigated. By employing CoFeB/MgO as the spin injector, the spin relaxation time and diffusion length in n-type GaN film are revealed to be 54.9ps and 214.4nm, respectively, through the three-terminal Hanle measurement. As the spin injector structure is applied to blue spin-LED, a maximal circular polarization of 3.3% is detected in electroluminescence, with the surface-emitting geometry and under a vertical magnetic field. UV spin-LED with n-Al_0.05Ga_0.95N transport layer is also fabricated, whose optical polarization is relatively smaller due to the larger spin–orbit coupling in Al atoms.

研究了基于氮化物的自旋 LED 中的 RT 自旋注入和光偏振。通过采用 CoFeB/MgO 作为自旋注入器，通过三端 Hanle 测量显示 n 型 GaN 薄膜中的自旋弛豫时间和扩散长度分别为 54.9ps 和 214.4nm。当自旋注入器结构应用于蓝色自旋 LED 时，在电致发光中检测到 3.3% 的最大圆极化，具有表面发射几何形状并在垂直磁场下。还制造了具有 n-Al _0.05 Ga _0.95 N 传输层的UV 自旋 LED，由于 Al 原子中较大的自旋轨道耦合，其光偏振相对较小。