A novel snapback-free and low-loss shorted-anode lateral insulated bipolar transistor (SA-LIGBT) based on silicon on insulator with self-driving auxiliary gate (SAG) in the anode is proposed, named as SAG-LIGBT. The SAG is characterised by metal oxide semiconductor (MOS) structure in the anode, and the gate of the MOS is shorted with the anode electrode, thus self-driving without extra gate signal is achieved. At anode voltage V _A = 0, the P-base serving as a barrier to hinder electrons flowing into the N + anode. At V _A = V _on of the forward conduction, the P-base is depleted to intrinsic, and the anode resistance R _SA is increased from R _P-base to R _intrinsic . At V _A = V _bus of the turn-off state, the P-base is fully depleted and an electron accumulation layer is formed under the SiO ₂ , thus the R _SA is decreased from R _intrinsic to R _n-channel to provide a low-resistance path for electron current. Consequently, the device not only eliminates the snapback effect but also reduces the turn-off energy loss E _off . Therefore, a better trade-off is obtained between V _on and E _off . At the same V _on , the E _off of SAG-LIGBT is decreased by 57 and 66% compared with separated shorted-anode LIGBT (SSA-LIGBT) and SA-LIGBT, respectively. Moreover, the SAG-LIGBT exhibits the shorter T _off of 80 ns than the SSA-LIGBT and vertical P-collector and N-buffer LIGBT at J _A = 100 A/cm ² .

中文翻译：

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具有自动驱动辅助栅极的无回弹和低损耗SAG-LIGBT

提出了一种新型的无回弹，低损耗的短阳极横向绝缘双极型晶体管（SA-LIGBT），其基于在绝缘体上带有自驱动辅助栅极（SAG）的硅绝缘体，称为SAG-LIGBT。该SAG的特征在于阳极中的金属氧化物半导体（MOS）结构，并且该MOS的栅极与阳极电极短路，从而实现了无额外栅极信号的自驱动。在阳极电压下V _A = 0，P基作为阻挡层，阻止电子流入N +阳极。在V _A =V _在正向传导中，P基耗尽至本征，阳极电阻[R _SA从[R _P基到[R _内在的 。在V _A =V _总线断开状态时，P基极被完全耗尽，在SiO下形成电子的积累层 ₂ ，因此[R _SA从降低[R _固有的[R _n沟道可为电子电流提供低电阻路径。因此，该器件不仅消除了回跳效应，而且减少了关断能量损耗Ë _关 。因此，可以在V _在和Ë _关 。在同一时间V _上 ，该Ë 与分离的短路阳极LIGBT（SSA-LIGBT）和SA-LIGBT相比，SAG-LIGBT的_截止分别降低了57％和66％。而且，SAG-LIGBT表现出更短的Ť _关的80纳秒比SSA-LIGBT和垂直P-集电极和N-缓冲器LIGBT在Ĵ _A＝ 100A / cm ² 。