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Snapback-free and low-loss SAG-LIGBT with self-driving auxiliary gate
IET Power Electronics ( IF 1.7 ) Pub Date : 2020-11-06 , DOI: 10.1049/iet-pel.2019.1491 Weizhong Chen 1, 2 , Shun Li 1 , Yao Huang 1 , Yi Huang 1 , ZhengSheng Han 2, 3
IET Power Electronics ( IF 1.7 ) Pub Date : 2020-11-06 , DOI: 10.1049/iet-pel.2019.1491 Weizhong Chen 1, 2 , Shun Li 1 , Yao Huang 1 , Yi Huang 1 , ZhengSheng Han 2, 3
Affiliation
A novel snapback-free and low-loss shorted-anode lateral insulated bipolar transistor (SA-LIGBT) based on silicon on insulator with self-driving auxiliary gate (SAG) in the anode is proposed, named as SAG-LIGBT. The SAG is characterised by metal oxide semiconductor (MOS) structure in the anode, and the gate of the MOS is shorted with the anode electrode, thus self-driving without extra gate signal is achieved. At anode voltage V
A = 0, the P-base serving as a barrier to hinder electrons flowing into the N + anode. At V
A = V
on of the forward conduction, the P-base is depleted to intrinsic, and the anode resistance R
SA is increased from R
P-base to R
intrinsic
. At V
A = V
bus of the turn-off state, the P-base is fully depleted and an electron accumulation layer is formed under the SiO
2
, thus the R
SA is decreased from R
intrinsic to R
n-channel to provide a low-resistance path for electron current. Consequently, the device not only eliminates the snapback effect but also reduces the turn-off energy loss E
off
. Therefore, a better trade-off is obtained between V
on and E
off
. At the same V
on
, the E
off of SAG-LIGBT is decreased by 57 and 66% compared with separated shorted-anode LIGBT (SSA-LIGBT) and SA-LIGBT, respectively. Moreover, the SAG-LIGBT exhibits the shorter T
off of 80 ns than the SSA-LIGBT and vertical P-collector and N-buffer LIGBT at J
A = 100 A/cm
2
.
中文翻译:
具有自动驱动辅助栅极的无回弹和低损耗SAG-LIGBT
提出了一种新型的无回弹,低损耗的短阳极横向绝缘双极型晶体管(SA-LIGBT),其基于在绝缘体上带有自驱动辅助栅极(SAG)的硅绝缘体,称为SAG-LIGBT。该SAG的特征在于阳极中的金属氧化物半导体(MOS)结构,并且该MOS的栅极与阳极电极短路,从而实现了无额外栅极信号的自驱动。在阳极电压下V
A = 0,P基作为阻挡层,阻止电子流入N +阳极。在V
A =V
在正向传导中,P基耗尽至本征,阳极电阻[R
SA从[R
P基到[R
内在的
。在V
A =V
总线断开状态时,P基极被完全耗尽,在SiO下形成电子的积累层
2
,因此[R
SA从降低[R
固有的[R
n沟道可为电子电流提供低电阻路径。因此,该器件不仅消除了回跳效应,而且减少了关断能量损耗Ë
关
。因此,可以在V
在和Ë
关
。在同一时间V
上
,该Ë
与分离的短路阳极LIGBT(SSA-LIGBT)和SA-LIGBT相比,SAG-LIGBT的截止分别降低了57%和66%。而且,SAG-LIGBT表现出更短的Ť
关的80纳秒比SSA-LIGBT和垂直P-集电极和N-缓冲器LIGBT在Ĵ
A= 100A / cm
2
。
更新日期:2020-11-12
中文翻译:
具有自动驱动辅助栅极的无回弹和低损耗SAG-LIGBT
提出了一种新型的无回弹,低损耗的短阳极横向绝缘双极型晶体管(SA-LIGBT),其基于在绝缘体上带有自驱动辅助栅极(SAG)的硅绝缘体,称为SAG-LIGBT。该SAG的特征在于阳极中的金属氧化物半导体(MOS)结构,并且该MOS的栅极与阳极电极短路,从而实现了无额外栅极信号的自驱动。在阳极电压下