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PIII Treatment of SS Samples Using a Current-Controlled High-Voltage Pulser
IEEE Transactions on Plasma Science ( IF 1.3 ) Pub Date : 2020-11-01 , DOI: 10.1109/tps.2020.3032119
Mario Ueda , Jose Osvaldo Rossi , Fernanda Sayuri Yamasaki , Ataide Ribeiro Silva , Michel Felipe Araujo , Carlos Mauricio Lepienski , Luc Pichon , H. Reuther

Plasma immersion ion implantation (PIII) was conducted in a large volume chamber with a current-controlled high-voltage pulser, to test the vacuum, plasma, and PIII conditions, in a preparation for the treatments of large workpieces or the batch-processing mode. For that purpose, a rugged high-power pulser (10 kW average) based on solid-state moderate voltage pulse system (1 kV) was coupled to a high-voltage transformer (1:22) to feed different loaded sample supports placed in different positions inside the chamber. It was found that the plasma, when produced by a hot filament enhanced glow discharge source, is not uniformly distributed in the chamber but despite that, implantation doses are locally uniform within 10% for 10–15-cm distances, along with the supports. Stainless steel 304 (SS304) -type samples were successfully treated with nitrogen PIII and different tests showed improvements on their mechanical and tribological properties.

中文翻译:

使用电流控制的高压脉冲器处理 SS 样品的 PIII

等离子浸入离子注入 (PIII) 在大容量腔室中进行,并配备电流控制的高压脉冲发生器,以测试真空、等离子和 PIII 条件,为大型工件的处理或批处理模式做准备. 为此,基于固态中压脉冲系统 (1 kV) 的坚固耐用的大功率脉冲发生器 (10 kW) 与高压变压器 (1:22) 耦合,以馈送放置在不同位置的不同负载样品支架。舱内的位置。研究发现,当由热灯丝增强辉光放电源产生时,等离子体在腔室中分布不均匀,但尽管如此,10-15 厘米距离内的注入剂量与支撑物的局部均匀性在 10% 以内。
更新日期:2020-11-01
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