A dielectric modulated (DM) dual-sided dopingless (DL) GaAs_0.5Sb_0.5/In_0.53Ga_0.47As hetero-junction (HJ) Tunnel FET (DM-DDL-HTFET) based label-free biosensor architecture having hetero-gate-dielectric (HGD) has been offered. Here, virtual pocket of N⁺-category with differing electronic concentration (N_e) has been realized through the adjustment of source-sided-channel length (L_SC) below the gate region. Primarily, the optimized structure has been investigated considering energy-band gap, mole fraction of HJ material and gate-to-source spacer thickness (L_gap,S). Next, the efficiency of optimized DDL-HTFET model excluding nano-gap has been juxtaposed with the Si-based TFET contenders. The effect on N_e, surface potential (ψ), drain-current (I_DS), and their equivalent sensitivity have been analyzed by the ATLAS device simulator considering the steric hindrance issues. 37.54% and 54% improvement in threshold voltage sensitivity can be obtained for DM-DDL-HTFET over single side DL-SiTFET (DM-SDL-SiTFET) due to variation of oxide layer thickness (T_ox) and source-side dielectric material respectively. Moreover, DM-DDL-HTFET offers 58.64% (42.18%) and 44.44% (73.33%) inferior minimum noise figure and noise conductance over DM-SDL-SiTFET at 50 (250) GHz frequency correspondingly after immobilization of APTES biomolecules.

中文翻译：

---

考虑部分杂交问题的噪声免疫无掺杂异质结 Bio-TFET 分析

介电调制 (DM) 双面无掺杂 (DL) GaAs _0.5 Sb _0.5 /In _0.53嘎_0.47由于具有异质栅极电介质 (HGD) 的基于异质结 (HJ) 隧道 FET (DM-DDL-HTFET) 的无标记生物传感器架构已被提供。在这里，虚拟口袋N通过调整栅极区域下方的源极侧沟道长度 (L _SC )已经实现了具有不同电子浓度 (N _e ) 的^{+ -}类别。首先，已考虑能带隙、HJ 材料的摩尔分数和栅源间隔层厚度 (L _gap,S )研究了优化结构。接下来，不包括纳米间隙的优化 DDL-HTFET 模型的效率已与基于 Si 的 TFET 竞争者并列。对 N _e、表面电位 (ψ)、漏电流 (I _DS)，并且考虑到位阻问题，ATLAS 设备模拟器已经分析了它们的等效灵敏度。由于氧化层厚度 (T _ox ) 和源极侧介电材料的变化，DM-DDL-HTFET 的阈值电压灵敏度比单侧 DL-SiTFET (DM-SDL-SiTFET) 提高了 37.54% 和 54% . 此外，在固定 APTES 生物分子后，DM-DDL-HTFET 在 50 (250) GHz 频率下与 DM-SDL-SiTFET 相比，提供 58.64% (42.18%) 和 44.44% (73.33%) 较差的最小噪声系数和噪声电导。