This letter presents the design, performance, and analysis of four low-noise amplifier (LNA) monolithic microwave integrated circuits (MMICs) operating in ${W}$ -band. Two LNA designs were fabricated in two variations of a 20-nm gate-length metal–oxide–semiconductor high-electron-mobility transistor (MOSHEMT) technology each. While for the first technology version the heterostructure is directly grown on the final gallium arsenide (GaAs) wafer, the second version uses direct wafer bonding to transfer the III–V heterostructure after the epitaxial growth to a silicon (Si) substrate. Based on the measured noise figure (NF) of the four MMICs over a comprehensive set of bias conditions, the impact of short-channel effects on the RF performance and possible improvements are analyzed. The first LNA covers an octave bandwidth with more than 15 dB of gain and an average NF (75–105 GHz) of 3.5 dB on a Si substrate. At 80 GHz, the second amplifier exhibits minimal NFs of 2.3 and 2.5 dB on GaAs and Si substrates, respectively. Compared to previously reported MOS- or Si-based technologies, the presented LNAs demonstrate state-of-the-art noise performance emphasizing the importance of electron confinement for highly scaled transistor technologies.

中文翻译：

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硅和砷化镓衬底上的 InGaAs MOSHEMT W 波段 LNA

这封信介绍了在 ${W}$ 波段工作的四个低噪声放大器 (LNA) 单片微波集成电路 (MMIC) 的设计、性能和分析。两种 LNA 设计分别采用 20 纳米栅极长度金属氧化物半导体高电子迁移率晶体管 (MOSHEMT) 技术的两种变体制造。对于第一个技术版本，异质结构直接在最终的砷化镓 (GaAs) 晶片上生长，而第二个版本使用直接晶片键合将外延生长后的 III-V 异质结构转移到硅 (Si) 衬底上。基于在一组综合偏置条件下测量的四个 MMIC 的噪声系数 (NF)，分析了短通道效应对 RF 性能的影响和可能的改进。第一个 LNA 覆盖倍频程带宽，增益超过 15 dB，Si 衬底上的平均 NF (75–105 GHz) 为 3.5 dB。在 80 GHz 时，第二个放大器在 GaAs 和 Si 衬底上的最小 NF 分别为 2.3 和 2.5 dB。与之前报道的基于 MOS 或 Si 的技术相比，所提出的 LNA 展示了最先进的噪声性能，强调了电子限制对于高度缩放晶体管技术的重要性。