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Reversible Control of Spintronic Properties of Ferromagnetic Metal/Organic Interfaces through Selective Molecular Switching
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-11-09 , DOI: 10.1021/acs.chemmater.0c03131
Sha Yang 1 , Shuang Li 1 , Ji-Chang Ren 1 , Christopher J. Butch 2, 3 , Wei Liu 1
Affiliation  

Controlling spintronic properties of ferromagnetic metal/organic interfaces in a reversible manner provides novel avenues in spin memory and logic operations. Until now, most previous work has been performed by adsorbing magnetic organometallic complexes with bistable magnetic states on metal surfaces. However, the strong coupling between the molecule and metal surface usually destroys the switching ability or even leads to dissociation of the adsorbates, obstructing efficient control of spintronic properties at the interface. Here, we propose a new design to realize the switchable magnetic properties based on bistable chemisorbed and physisorbed states of nonmagnetic molecules on ferromagnetic metal surfaces. The switching between the two states leads to distinct local magnetic moments and yields actively controlled spin polarization of the tunneling current. Based on this strategy, we have predicted a series of switchable spinterfaces from halogenated aromatic hydrocarbons on ferromagnetic metal surfaces, allowing highly tunable interfacial spintronic properties.

中文翻译:

通过选择性分子开关可逆控制铁磁金属/有机界面的自旋电子性质

以可逆的方式控制铁磁金属/有机界面的自旋电子性质为自旋存储器和逻辑运算提供了新颖的途径。到现在为止,大多数先前的工作都是通过将具有双稳态磁性的磁性有机金属配合物吸附在金属表面上来进行的。然而,分子与金属表面之间的强耦合通常破坏了转换能力,甚至导致被吸附物的离解,从而阻碍了对界面上自旋电子学性质的有效控制。在这里,我们提出了一种新设计,以基于铁磁金属表面上非磁性分子的双稳态化学吸附态和物理吸附态来实现可切换的磁性。两种状态之间的切换导致截然不同的局部磁矩,并产生主动控制的隧穿电流的自旋极化。基于此策略,我们已经预测到铁磁性金属表面上的卤代芳烃会产生一系列可切换的界面,从而实现高度可调的界面自旋电子性质。
更新日期:2020-11-25
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