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Photoresponse of MoSe2 Transistors: A Fully Numerical Quantum Transport Simulation Study
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-11-10 , DOI: 10.1021/acsaelm.0c00795 Gyuchull Han 1 , Manasa Kaniselvan 1 , Youngki Yoon 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-11-10 , DOI: 10.1021/acsaelm.0c00795 Gyuchull Han 1 , Manasa Kaniselvan 1 , Youngki Yoon 1
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Phototransistors made with two-dimensional transition metal dichalcogenides (TMDs) have shown excellent potential for nanoscale optoelectronic applications. In this work, we perform fully numerical simulations to investigate photoresponse mechanisms in MoSe2 transistors, considering photoconductive and photogating (PG) effects. Our model implements PG by self-consistently solving a trapped charge distribution with electrostatics and transport in the channel. The results are in good agreement with the reported experimental device characteristics and explain the PG effect by quantifying potential barrier lowering and trapped carrier concentration upon illumination. We study the two mechanisms in isolation and reveal the dominance of the PG effect on the photocurrent at high gate voltages. Additionally, we show a trade-off between photoresponsivity and specific detectivity at different gate voltages and find that the gain of the phototransistor decreases with increased optical power density due to the saturation of trapped carriers. Finally, we show that photoresponsivity can be tuned over several orders of magnitude by varying trap-state energy, capture cross sections, total concentration of trap states, and recombination lifetime, all of which can be changed through material optimization. Our work highlights the underlying physics of photoresponse in TMD devices and presents a model which can be used for future device design.
中文翻译：
MoSe 2晶体管的光响应：全数值量子传输模拟研究
用二维过渡金属二卤化物（TMD）制成的光电晶体管在纳米光电应用中显示出了极好的潜力。在这项工作中，我们执行完整的数值模拟以研究MoSe 2中的光响应机制晶体管，考虑了光导和光闸（PG）的影响。我们的模型通过自洽一致地解决带静电的陷阱电荷分布和通道中的传输来实现PG。结果与已报道的实验装置特性非常吻合，并通过量化势垒降低和照明时俘获的载流子浓度来解释PG效应。我们隔离地研究了两种机制，并揭示了在高栅极电压下PG效应对光电流的支配性。此外，我们显示了在不同栅极电压下光响应性和比检测率之间的权衡，并且发现由于捕获的载流子的饱和，光电晶体管的增益随着光功率密度的增加而降低。最后，我们表明，通过改变陷阱态能量，捕获截面，陷阱态总浓度和复合寿命，可以在几个数量级上调节光响应性，所有这些都可以通过材料优化来改变。我们的工作重点介绍了TMD设备中光响应的基本原理，并提出了可用于未来设备设计的模型。
更新日期：2020-11-25
中文翻译：
MoSe 2晶体管的光响应：全数值量子传输模拟研究
用二维过渡金属二卤化物（TMD）制成的光电晶体管在纳米光电应用中显示出了极好的潜力。在这项工作中，我们执行完整的数值模拟以研究MoSe 2中的光响应机制晶体管，考虑了光导和光闸（PG）的影响。我们的模型通过自洽一致地解决带静电的陷阱电荷分布和通道中的传输来实现PG。结果与已报道的实验装置特性非常吻合，并通过量化势垒降低和照明时俘获的载流子浓度来解释PG效应。我们隔离地研究了两种机制，并揭示了在高栅极电压下PG效应对光电流的支配性。此外，我们显示了在不同栅极电压下光响应性和比检测率之间的权衡，并且发现由于捕获的载流子的饱和，光电晶体管的增益随着光功率密度的增加而降低。最后，我们表明，通过改变陷阱态能量，捕获截面，陷阱态总浓度和复合寿命，可以在几个数量级上调节光响应性，所有这些都可以通过材料优化来改变。我们的工作重点介绍了TMD设备中光响应的基本原理，并提出了可用于未来设备设计的模型。
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