Abstract

A nitro substituted azo-chalcone derivative 3-(4-(dimethylamino) phenyl) diazenyl)phenyl)-1-(4-nitrophenyl) prop-2-en-1-one (AZOC-4N) and a reference compound 3-(4-(dimethylamino) phenyl) diazenyl) phenyl)-1-phenylprop-2-en-1-one (AZOC-H) were synthesized by Claisen Schmidt reaction. Thermogravimetry, UV-vis and cyclic voltammetry were used to study the influence of the introduction of nitro in the conjugated molecule AZOC-4N on the photoelectric properties. The active layer was further prepared by solution spin coating, and the morphology of the film was characterized by AFM. The electrical memory performance of the device is studied. It is found that the device has the nonvolatile binary write once read many (WORM) memory performances, and the threshold voltage of the device prepared by introducing nitro group into the molecule is lower—1.4 V. Finally, the electrical memory performance of the device is analyzed by theoretical calculation.

摘要

硝基取代的偶氮查尔酮衍生物3-(4-(二甲氨基)苯基)二氮烯基)苯基)-1-(4-硝基苯基)prop-2-en-1-one( AZOC-4N )和参考化合物3-( 4-(二甲氨基)苯基)二氮烯基)苯基)-1-苯基丙-2-烯-1-酮( AZOC-H )通过克莱森施密特反应合成。采用热重法、紫外-可见光法和循环伏安法研究在共轭分子AZOC-4N中引入硝基的影响关于光电特性。通过溶液旋涂进一步制备活性层，并通过AFM表征薄膜的形貌。研究了器件的电记忆性能。发现该器件具有非易失性二进制写入一次读取多次（WORM）存储性能，分子中引入硝基制备的器件阈值电压较低—1.4 V。 最后，器件的电存储性能通过理论计算进行分析。