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Effect of band-gap tuning on lead-free double perovskite heterostructure devices for photovoltaic applications via SCAPS simulation
Materials Today Communications ( IF 3.8 ) Pub Date : 2020-11-11 , DOI: 10.1016/j.mtcomm.2020.101851
Manish Kumar , Abhishek Raj , Arvind Kumar , Avneesh Anshul

In the present study, the effect of band-gap tuning and temperature on different double perovskites, A2NiMnO6 (A = La,Eu and Dy) as an absorbing layer in the perovskite solar cell (PSC) heterostructure devices were investigated via SCAPS simulation approach. We have optimized the hetrostructures and achieved the maximum power conversion efficiency (PCE)∼9.68%, 9.41% and 8.97% for La2NiMnO6 (LNMO), Eu2NiMnO6 (ENMO) and Dy2NiMnO6 (DNMO) at their optimum band-gap values∼1.5 eV, 1.625 eV and 1.625 eV, respectively. It is observed that the moderate band-gap i.e. 1.4-1.7 eV and low temperature ∼250 K are extremely favorable for the improvement in PCE of the devices. The heterostructure device of LNMO shows the better device functionalities at optimum conditions in comparison to others. It is believed that if we would be able to get these tuned band-gaps in the laboratory then these tuned band-gap materials may be used as potential candidates for highly efficient absorbing materials in PSC applications.



中文翻译:

通过SCAPS模拟,带隙调谐对光伏应用中的无铅钙钛矿异质结构器件的影响

在本研究中,通过SCAPS研究了带隙调谐和温度对不同的双重钙钛矿,钙钛矿型太阳能电池(PSC)异质结构器件中的吸收层A 2 NiMnO 6(A = La,Eu和Dy)的影响。模拟方法。我们优化了组织结构,并实现了La 2 NiMnO 6(LNMO),Eu 2 NiMnO 6(ENMO)和Dy 2 NiMnO 6的最大功率转换效率(PCE)〜9.68%,9.41%和8.97%(DNMO)的最佳带隙值分别约为1.5 eV,1.625 eV和1.625 eV。可以看出,适度的带隙即1.4-1.7 eV和〜250 K的低温对改善器件的PCE极为有利。与其他相比,LNMO的异质结构器件在最佳条件下显示出更好的器件功能。据信,如果我们能够在实验室中获得这些调谐的带隙,那么这些调谐的带隙材料可以用作PSC应用中高效吸收材料的潜在候选者。

更新日期:2020-11-12
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