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Enhanced Contact Properties of Spray-Coated AgNWs Source and Drain Electrodes in Oxide Thin-Film Transistors
Current Applied Physics ( IF 2.4 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.cap.2020.10.020
Sun Young Jung , Jae Young Kim , Geonoh Choe , Bo Sung Choi , Se Jin Kim , Tae Kyu An , Yong Jin Jeong

Abstract Facile patterning of electrodes is required for various electronic applications, particularly in solution-processed oxide thin-film transistors (TFTs). In this study, source and drain electrodes were prepared from silver nanowires (AgNWs) using spray-coating and hot press techniques. Although spray coating allowed production of AgNW patterns, which could function as electrodes in oxide TFT, the as-sprayed films did not provide a sufficient physical contact with oxide semiconductors and formed interspaces that impeded electron injection. At the same time, hot press technique produced denser AgNW networks that had a tight contact with the oxide semiconductors. As a result, hot-pressed films were considered as satisfactory source and drain electrodes for high-performance oxide TFTs, as they provided an easy electron injection. Finally, the prepared oxide TFTs with hot-pressed AgNW electrodes exhibited average field-effect mobility of 4.75 ± 1.5 cm2/Vs, significantly higher than that of the TFTs with as-sprayed AgNW electrodes (0.08 ± 0.05 cm2/Vs).

中文翻译:

氧化物薄膜晶体管中喷涂 AgNW 源极和漏极电极的增强接触性能

摘要 各种电子应用需要简单的电极图案化,特别是在溶液处理的氧化物薄膜晶体管 (TFT) 中。在这项研究中,源电极和漏电极是使用喷涂和热压技术从银纳米线 (AgNW) 制备的。尽管喷涂允许生产 AgNW 图案,其可用作氧化物 TFT 中的电极,但喷涂后的薄膜不能提供与氧化物半导体的充分物理接触,并形成阻碍电子注入的间隙。同时,热压技术产生了与氧化物半导体紧密接触的更致密的 AgNW 网络。因此,热压薄膜被认为是高性能氧化物 TFT 的令人满意的源电极和漏电极,因为它们提供了容易的电子注入。最后,
更新日期:2021-01-01
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