Abstract

When studying doped anisotypic heterostructures with Ga_{1 – x}In_xAs_yP_{1 – y} layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga_{1 – x}In_xAs_yP_{1 – y} layer from the side of the substrate in some of the samples, along which the arsenic content (y) increases from the interface with the InP layer to the surface of the structure by a Δy value of up to 0.15, while the content of elements of the third group (x) remains constant.

中文翻译：

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掺杂对MOCVD法获得的各向异性GaInAsP和InP异质结构过渡层影响的研究

摘要

当与镓研究掺杂anisotypic异质结构_{1 - X}在_X如_ý P _{1 - ý}通过金属有机化学气相沉积生长在与InP缓冲层InP衬底上的层，过渡区域的存在被揭示在GA _{1 - X}在_X如_ÿ P _{1 - Ÿ}从基板的中一些样品的侧层，沿着该砷含量（Ý从与InP层到所述结构的表面的界面由Δ）增加ÿ最多的值，以0.15 ，而第三组元素的内容（x） 保持不变。