Abstract

Isoperiodic Ga_xIn_{1 – x}Sb_yAs_zP_{1 – y – z}/InP heterostructures for the operation at a wavelength of 1.06–1.60 μm are obtained using the method of zone crystallization with a temperature gradient. An absolute spectral sensitivity of about 0.59 A/W and a response time of about 10 ns are achieved. The threshold sensitivity of the created photodiodes is in the range of 2 × 10^–10–5 × 10^–11 W at a signal-to-noise ratio of 10.

中文翻译：

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等规Ga x In 1 – x Sb y As z P 1 – y – z / InP平面p – n光电二极管的异质结构

摘要

等温Ga _x In _{1 – x} Sb _y As _z P _{1 – y – z} / InP异质结构是通过使用具有温度梯度的区域结晶方法获得的，其在1.06-1.60μm波长下的操作。可获得约0.59 A / W的绝对光谱灵敏度和约10 ns的响应时间。在信噪比为10的情况下，创建的光电二极管的阈值灵敏度在2×10 ^–10 –5 –5×10 ^–11 W的范围内。